摘要
In this work, we fabricated indium gallium zinc oxide (IGTO) metal-semiconductor-metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 105 with a low dark current of 1.19 × 10−11 A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 105, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.
原文 | English |
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頁(從 - 到) | 1849-1858 |
頁數 | 10 |
期刊 | Sensors and Materials |
卷 | 36 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2024 |
All Science Journal Classification (ASJC) codes
- 儀器
- 一般材料科學