Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering

Artde Donald Kin Tak Lam, Tsung I. Liao, Sheng Po Chang, Shoou Jinn Chang

研究成果: Article同行評審

摘要

In this work, we fabricated indium gallium zinc oxide (IGTO) metal-semiconductor-metal (MSM) photodetectors (PDs) with different oxygen flow ratios and investigated and discussed their characteristics. 0% PDs show a high responsivity of 25.75 A/W, but their dark current is very high and their switching time is low. 10% PDs exhibit the highest performance. They show a high photo/dark current ratio of 1.05 × 105 with a low dark current of 1.19 × 10−11 A. Their responsivity is 0.12 A/W and their rejection ratio is 9.38 × 105, which is sufficiently high to ensure the accuracy of distinguishing between UV and visible ranges. Their rising time is 206 s and their falling time is 58 s. It was observed that the response time shortened as the oxygen flow ratio was increased.

原文English
頁(從 - 到)1849-1858
頁數10
期刊Sensors and Materials
36
發行號5
DOIs
出版狀態Published - 2024

All Science Journal Classification (ASJC) codes

  • 儀器
  • 一般材料科學

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