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Time-resolved Response Improvement of Oxygen-doped a-In-Ga-Sn-O Metal-Semiconductor-Metal Photodetectors by Sputtering
Artde Donald Kin Tak Lam
, Tsung I. Liao
, Sheng Po Chang
,
Shoou Jinn Chang
微奈米科技研究中心
微電子工程研究所
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Keyphrases
Dark Current
100%
Photodetector
100%
Metal-semiconductor-metal Photodetector
100%
Amorphous InGaZnO (a-IGZO)
100%
Time-resolved
100%
Response Enhancement
100%
Oxygen Flow Ratio
100%
Oxygen-doped
100%
Response Time
50%
High Performance
50%
Switching Time
50%
Responsivity
50%
Rejection Ratio
50%
High Responsivity
50%
Visible Spectrum
50%
Current Ratio
50%
Rise Time
50%
Fall Time
50%
Low Dark Current
50%
UV Range
50%
Engineering
Photometer
100%
Responsivity
50%
Response Time
25%
Switching Time
25%
Current Ratio
25%
Physics
Photometer
100%
Dark Current
75%
Indium
25%
Zinc Oxide
25%
Material Science
Photosensor
100%
Indium
25%
Gallium
25%
Zinc Oxide
25%