TiO2-dielectric AlGaN/GaN/Si metal-oxide-semiconductor high electron mobility transistors by using nonvacuum ultrasonic spray pyrolysis deposition

Bo Yi Chou, Ching Sung Lee, Cheng Long Yang, Wei Chou Hsu, Han Yin Liu, Meng Hsueh Chiang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

High-k TiO2-dielectric Al0.25Ga0.75N/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) grown on Si substrates by using nonvacuum ultrasonic spray pyrolysis deposition technique are reported for the first time. The effective oxide thickness is 1.45 nm with layer thickness/dielectric constant of 20 nm/53.6. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. The gate leakage current IGD is decreased by three orders at VGD = -50 V as compared with a reference Schottky-gate device. Superior device characteristics are achieved for the present MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 μ m × 100 μ m including drain-source current density IDS at VGS = 0 V (IDSS0) of 384 (342) mA/mm, maximum IDS (IDS, max) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-ON voltage (VON) of 3.8 (1.8) V, on-state breakdown (BVDS) of 139 (94) V, gate-voltage swing of 2.7 (1.7) V, and ON/OFF current ratio (ION/IOFF) of 4.5 × 105 (3.5 × 102).

原文English
頁(從 - 到)1091-1093
頁數3
期刊IEEE Electron Device Letters
35
發行號11
DOIs
出版狀態Published - 2014 十一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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