Topographic study of sputter-deposited film with different process parameters

Shin Pon Ju, Cheng I. Weng, Jee Gong Chang, Chi Chuan Hwang

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

In this study, molecular dynamics simulation is employed to investigate the surface topography of thin films produced by the sputtering process for different parameters such as substrate temperature, incident energy, and incident angle. Interface width is used to quantify the quality of the deposited film. The Morse potential is used to model the atomic interaction between atoms. From the results of this study, it is found that for lower substrate temperature, lower incident energy, and larger incident angle, the growing film structure tends toward a three-dimensional columnar structure, and a rougher film is produced. Conversely, for higher substrate temperature, higher incident energy, and smaller incident angle, the growing film structure tends toward a two-dimensional (Frank-van der Merwe) quasi-layer-by-layer structure, and a smoother film is produced. Finally, average surface kinetic energy is found to be an important factor in determining the surface properties produced in the process. Generally, the produced film is smoother when the average surface kinetic energy is larger.

原文English
頁(從 - 到)7825-7832
頁數8
期刊Journal of Applied Physics
89
發行號12
DOIs
出版狀態Published - 2001 6月

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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