Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering

Changan Wang, Ching Hao Chang, Andreas Herklotz, Chao Chen, Fabian Ganss, Ulrich Kentsch, Deyang Chen, Xingsen Gao, Yu Jia Zeng, Olav Hellwig, Manfred Helm, Sibylle Gemming, Ying Hao Chu, Shengqiang Zhou

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultrathin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study, THE is observed in 60-nm-thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii–Moriya interaction as a result of artificial inversion symmetry breaking associated with the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronic devices.

原文English
文章編號2000184
期刊Advanced Electronic Materials
6
發行號6
DOIs
出版狀態Published - 2020 六月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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