Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

Qing Lin He, Gen Yin, Luyan Yu, Alexander J. Grutter, Lei Pan, Chui Zhen Chen, Xiaoyu Che, Guoqiang Yu, Bin Zhang, Qiming Shao, Alexander L. Stern, Brian Casas, Jing Xia, Xiaodong Han, Brian J. Kirby, Roger K. Lake, K. T. Law, Kang L. Wang

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ∼90 K.

原文English
文章編號096802
期刊Physical review letters
121
發行號9
DOIs
出版狀態Published - 2018 八月 29

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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