Towards Si1-xGex quantum-well resonant-state terahertz laser

I. V. Altukhov; E. G. Chirkova; V. P. Sinis; M. S. Kagan; Yu P. Gousev; S. G. Thomas; K. L. Wang; M. A. Odnoblyudov; I. N. Yassievich

doi:10.1063/1.1423771

Towards Si_1-xGe_x quantum-well resonant-state terahertz laser

I. V. Altukhov, E. G. Chirkova, V. P. Sinis, M. S. Kagan, Yu P. Gousev, S. G. Thomas, K. L. Wang, M. A. Odnoblyudov, I. N. Yassievich

電機資訊學院

研究成果: Article › 同行評審

61 引文斯高帕斯（Scopus）

摘要

We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si_1-xGe_x quantum-well structures. The lasing arises under strong electric fields (300-1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.

原文	English
頁（從 - 到）	3909-3911
頁數	3
期刊	Applied Physics Letters
卷	79
發行號	24
DOIs	https://doi.org/10.1063/1.1423771
出版狀態	Published - 2001 十二月 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1423771

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abstract = "We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1-xGex quantum-well structures. The lasing arises under strong electric fields (300-1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.",

author = "Altukhov, {I. V.} and Chirkova, {E. G.} and Sinis, {V. P.} and Kagan, {M. S.} and Gousev, {Yu P.} and Thomas, {S. G.} and Wang, {K. L.} and Odnoblyudov, {M. A.} and Yassievich, {I. N.}",

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AU - Chirkova, E. G.

AU - Sinis, V. P.

AU - Kagan, M. S.

AU - Gousev, Yu P.

AU - Thomas, S. G.

AU - Wang, K. L.

AU - Odnoblyudov, M. A.

AU - Yassievich, I. N.

PY - 2001/12/10

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