Towards Si1-xGex quantum-well resonant-state terahertz laser

I. V. Altukhov, E. G. Chirkova, V. P. Sinis, M. S. Kagan, Yu P. Gousev, S. G. Thomas, K. L. Wang, M. A. Odnoblyudov, I. N. Yassievich

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61 引文 斯高帕斯(Scopus)

摘要

We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1-xGex quantum-well structures. The lasing arises under strong electric fields (300-1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.

原文English
頁(從 - 到)3909-3911
頁數3
期刊Applied Physics Letters
79
發行號24
DOIs
出版狀態Published - 2001 十二月 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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