Towards the high performance N channel organic memory transistors with modified polyimide gate dielectrics

Yu Fu Wang, Chin Yang Lin, Min Ruei Tsai, Horng-Long Cheng, Wei-Yang Chou

研究成果: Conference contribution

摘要

Organic field-effect transistor-based (OFET) memory devices with polyimide (PI) electrets were fabricated. Herein, we have demonstrated the relevance between electrical characteristics and polarity effects of polymeric gate electret with quasi-permanent electric charges. The memory behaviors and drain currents of OFETs could be remarkably enhanced by using polymeric PI electrets which can trap the charge carriers into its polar groups by bias-induced dipole fields. Moreover, these trapped charges can be rapidly released through reorientation of dipoles within bias field. Consequently, the electric dipoles within the PI electret play a key role in extending the memory window and enhancing electrical characteristics of OFET-based memory devices to achieve high-performance organic memory transistors.

原文English
主出版物標題Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials
發行者IEEE Computer Society
頁面169-172
頁數4
ISBN(列印)9784863483958
DOIs
出版狀態Published - 2014 一月 1
事件21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
持續時間: 2014 七月 22014 七月 4

出版系列

名字Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
國家/地區Japan
城市Kyoto
期間14-07-0214-07-04

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程

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