Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Yazeed Alaskar, Shamsul Arafin, Darshana Wickramaratne, Mark A. Zurbuchen, Liang He, Jeff McKay, Qiyin Lin, Mark S. Goorsky, Roger K. Lake, Kang L. Wang

研究成果: Article同行評審

82 引文 斯高帕斯(Scopus)

摘要

Van der Waals growth of GaAs on silicon using a two-dimensional layered material, graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer layer is presented. Two-dimensional growth of GaAs thin films on graphene is a potential route towards heteroepitaxial integration of GaAs on silicon in the developing field of silicon photonics. Hetero-layered GaAs is deposited by molecular beam epitaxy on graphene/silicon at growth temperatures ranging from 350°C to 600°C under a constant arsenic flux. Samples are characterized by plan-view scanning electron microscopy, atomic force microscopy, Raman microscopy, and X-ray diffraction. The low energy of the graphene surface and the GaAs/graphene interface is overcome through an optimized growth technique to obtain an atomically smooth low temperature GaAs nucleation layer. However, the low adsorption and migration energies of gallium and arsenic atoms on graphene result in cluster-growth mode during crystallization of GaAs films at an elevated temperature. In this paper, we present the first example of an ultrasmooth morphology for GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using quasi van der Waals epitaxy, making it a remarkable step towards an eventual demonstration of the epitaxial growth of GaAs by this approach for heterogeneous integration.

原文English
頁(從 - 到)6629-6638
頁數10
期刊Advanced Functional Materials
24
發行號42
DOIs
出版狀態Published - 2014 十一月 1

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學

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