Training-based forming process for RRAM yield improvement

Hsiu Chuan Shih, Ching Yi Chen, Cheng Wen Wu, Chih He Lin, Shyh Shyuan Sheu

研究成果: Conference contribution

10 引文 斯高帕斯(Scopus)

摘要

Over the past decade, the resistive memory device known as RRAM has been studied extensively in many ways, and many of its problems have been identified, discussed, and some solved. It is time to move from material, process, and device to circuit design and yield, in order to commercialize RRAM. However, as we move from resistive device to memory circuit, new problems do appear, partly because the operating conditions of resistive devices on real RRAM circuit differ from those in an experimental environment for single devices. In this paper, an over forming problem has been identified from our analysis, and we propose a solution based on training sequence. As a result, by solving the over forming problem, RRAM yield can be improved significantly. RRAM; forming process; training sequence; yield improvement; non-volatile memory; memory testing

原文English
主出版物標題Proceedings - 2011 29th IEEE VLSI Test Symposium, VTS 2011
頁面146-151
頁數6
DOIs
出版狀態Published - 2011 七月 1
事件2011 29th IEEE VLSI Test Symposium, VTS 2011 - Dana Point, CA, United States
持續時間: 2011 五月 12011 五月 5

出版系列

名字Proceedings of the IEEE VLSI Test Symposium

Conference

Conference2011 29th IEEE VLSI Test Symposium, VTS 2011
國家United States
城市Dana Point, CA
期間11-05-0111-05-05

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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