Transfer-Free Growth of Atomically Thin Transition Metal Disulfides Using a Solution Precursor by a Laser Irradiation Process and Their Application in Low-Power Photodetectors

Chi Chih Huang, Henry Medina, Yu Ze Chen, Teng Yu Su, Jian Guang Li, Chia Wei Chen, Yu Ting Yen, Zhiming M. Wang, Yu Lun Chueh

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Although chemical vapor deposition is the most common method to synthesize transition metal dichalcogenides (TMDs), several obstacles, such as the high annealing temperature restricting the substrates used in the process and the required transfer causing the formation of wrinkles and defects, must be resolved. Here, we present a novel method to grow patternable two-dimensional (2D) transition metal disulfides (MS2) directly underneath a protective coating layer by spin-coating a liquid chalcogen precursor onto the transition metal oxide layer, followed by a laser irradiation annealing process. Two metal sulfides, molybdenum disulfide (MoS2) and tungsten disulfide (WS2), are investigated in this work. Material characterization reveals the diffusion of sulfur into the oxide layer prior to the formation of the MS2. By controlling the sulfur diffusion, we are able to synthesize continuous MS2 layers beneath the top oxide layer, creating a protective coating layer for the newly formed TMD. Air-stable and low-power photosensing devices fabricated on the synthesized 2D WS2 without the need for a further transfer process demonstrate the potential applicability of TMDs generated via a laser irradiation process.

原文English
頁(從 - 到)2463-2470
頁數8
期刊Nano letters
16
發行號4
DOIs
出版狀態Published - 2016 4月 13

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 一般化學
  • 一般材料科學
  • 凝聚態物理學
  • 機械工業

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