Transport in a gated Al0.18Ga0.82N/GaN electron system

J. R. Juang, Tsai Yu Huang, Tse Ming Chen, Ming Gu Lin, Gil Ho Kim, Y. Lee, C. T. Liang, D. R. Hang, Y. F. Chen, Jen Inn Chyi

研究成果: Article同行評審

35 引文 斯高帕斯(Scopus)

摘要

The low-temperature transport properties of front-gated Al 0.18Ga0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 Å.

原文English
頁(從 - 到)3181-3184
頁數4
期刊Journal of Applied Physics
94
發行號5
DOIs
出版狀態Published - 2003 九月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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