Transport measurements on MOVPE-grown InN films

Shang Chia Chen, Shih Kai Lin, Kun Ta Wu, Chao Ping Huang, Pen Hsiu Chang, N. C. Chen, Chin An Chang, Hsian Chu Peng, Chuang Feng Shih, Kuo Shung Liu, Hong Syuan Wang, Pu Tai Yang, C. T. Liang, Y. H. Chang, Y. F. Chen

研究成果: Conference article

1 引文 斯高帕斯(Scopus)

摘要

We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

原文English
頁(從 - 到)428-430
頁數3
期刊Microelectronics Journal
36
發行號3-6
DOIs
出版狀態Published - 2005 三月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

引用此

Chen, S. C., Lin, S. K., Wu, K. T., Huang, C. P., Chang, P. H., Chen, N. C., Chang, C. A., Peng, H. C., Shih, C. F., Liu, K. S., Wang, H. S., Yang, P. T., Liang, C. T., Chang, Y. H., & Chen, Y. F. (2005). Transport measurements on MOVPE-grown InN films. Microelectronics Journal, 36(3-6), 428-430. https://doi.org/10.1016/j.mejo.2005.02.038