Transport measurements on MOVPE-grown InN films

Shang Chia Chen; Shih Kai Lin; Kun Ta Wu; Chao Ping Huang; Pen Hsiu Chang; N. C. Chen; Chin An Chang; Hsian Chu Peng; Chuang Feng Shih; Kuo Shung Liu; Hong Syuan Wang; Pu Tai Yang; C. T. Liang; Y. H. Chang; Y. F. Chen

doi:10.1016/j.mejo.2005.02.038

Transport measurements on MOVPE-grown InN films

Shang Chia Chen
, Shih Kai Lin
, Kun Ta Wu
, Chao Ping Huang
, Pen Hsiu Chang
, N. C. Chen
, Chin An Chang
, Hsian Chu Peng
, Chuang Feng Shih
, Kuo Shung Liu
, Hong Syuan Wang
, Pu Tai Yang
, C. T. Liang
, Y. H. Chang
, Y. F. Chen

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

原文	English
頁（從 - 到）	428-430
頁數	3
期刊	Microelectronics Journal
卷	36
發行號	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.038
出版狀態	Published - 2005 3月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mejo.2005.02.038

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@article{e21177d0415a445b91b2ea175e3b732d,

title = "Transport measurements on MOVPE-grown InN films",

abstract = "We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.",

author = "Chen, \{Shang Chia\} and Lin, \{Shih Kai\} and Wu, \{Kun Ta\} and Huang, \{Chao Ping\} and Chang, \{Pen Hsiu\} and Chen, \{N. C.\} and Chang, \{Chin An\} and Peng, \{Hsian Chu\} and Shih, \{Chuang Feng\} and Liu, \{Kuo Shung\} and Wang, \{Hong Syuan\} and Yang, \{Pu Tai\} and Liang, \{C. T.\} and Chang, \{Y. H.\} and Chen, \{Y. F.\}",

note = "Funding Information: This work was funded by the NSC, Taiwan. We thank C.C. Chang, T.-M. Chen, Y.-H. Chiu, and K.S. Cho for their experimental help. ",

year = "2005",

month = mar,

doi = "10.1016/j.mejo.2005.02.038",

language = "English",

volume = "36",

pages = "428--430",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "3-6",

}

TY - JOUR

T1 - Transport measurements on MOVPE-grown InN films

AU - Chen, Shang Chia

AU - Lin, Shih Kai

AU - Wu, Kun Ta

AU - Huang, Chao Ping

AU - Chang, Pen Hsiu

AU - Chen, N. C.

AU - Chang, Chin An

AU - Peng, Hsian Chu

AU - Shih, Chuang Feng

AU - Liu, Kuo Shung

AU - Wang, Hong Syuan

AU - Yang, Pu Tai

AU - Liang, C. T.

AU - Chang, Y. H.

AU - Chen, Y. F.

N1 - Funding Information: This work was funded by the NSC, Taiwan. We thank C.C. Chang, T.-M. Chen, Y.-H. Chiu, and K.S. Cho for their experimental help.

PY - 2005/3

Y1 - 2005/3

N2 - We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

AB - We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

UR - https://www.scopus.com/pages/publications/33644505477

UR - https://www.scopus.com/pages/publications/33644505477#tab=citedBy

U2 - 10.1016/j.mejo.2005.02.038

DO - 10.1016/j.mejo.2005.02.038

M3 - Conference article

AN - SCOPUS:33644505477

SN - 0026-2692

VL - 36

SP - 428

EP - 430

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-6

ER -

Transport measurements on MOVPE-grown InN films

摘要

All Science Journal Classification (ASJC) codes

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