Transport Study in Si-Silicide-Si Transistors Using a Monte Carlo Technique

Rahim Abdeshaah, K. L. Wang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The Monte Carlo technique has been used for the study of electron motion in a proposed Si-silicide-Si transistor (SST). The transmission coefficient and the transit time are calculated as functions of lattice temperature, initial energy of electrons coming from the emitter, and the applied base-collector bias. The results show that a maximum transmission coefficient for electrons occurs when the initial energy exceeds the maximum energy barrier of the base-collector junction by about 0.1 eV, and the transit time decreases as the applied base-collector junction bias increases and as the temperature decreases. Space charge effects caused by operating at high current densities are shown to reduce slightly the transmission coefficient.

原文English
頁(從 - 到)1701-1708
頁數8
期刊IEEE Transactions on Electron Devices
31
發行號12
DOIs
出版狀態Published - 1984 十二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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