The Monte Carlo technique has been used for the study of electron motion in a proposed Si-silicide-Si transistor (SST). The transmission coefficient and the transit time are calculated as functions of lattice temperature, initial energy of electrons coming from the emitter, and the applied base-collector bias. The results show that a maximum transmission coefficient for electrons occurs when the initial energy exceeds the maximum energy barrier of the base-collector junction by about 0.1 eV, and the transit time decreases as the applied base-collector junction bias increases and as the temperature decreases. Space charge effects caused by operating at high current densities are shown to reduce slightly the transmission coefficient.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering