Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

D. S. Choi, A. A. Balandin, M. S. Leung, G. W. Stupian, N. Presser, S. W. Chung, J. R. Heath, A. Khitun, K. L. Wang

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31 引文 斯高帕斯(Scopus)

摘要

The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

原文English
文章編號141503
期刊Applied Physics Letters
89
發行號14
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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