Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

D. S. Choi; A. A. Balandin; M. S. Leung; G. W. Stupian; N. Presser; S. W. Chung; J. R. Heath; A. Khitun; K. L. Wang

doi:10.1063/1.2357847

Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

D. S. Choi
, A. A. Balandin
, M. S. Leung
, G. W. Stupian
, N. Presser
, S. W. Chung
, J. R. Heath
, A. Khitun
, K. L. Wang

電機資訊學院

研究成果: Article › 同行評審

39 引文斯高帕斯（Scopus）

摘要

The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

原文	English
文章編號	141503
期刊	Applied Physics Letters
卷	89
發行號	14
DOIs	https://doi.org/10.1063/1.2357847
出版狀態	Published - 2006

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.2357847

其它文件與鏈接

引用此

@article{a7166d140be945ccac92cc976da0ed7a,

title = "Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks",

abstract = "The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.",

author = "Choi, \{D. S.\} and Balandin, \{A. A.\} and Leung, \{M. S.\} and Stupian, \{G. W.\} and N. Presser and Chung, \{S. W.\} and Heath, \{J. R.\} and A. Khitun and Wang, \{K. L.\}",

note = "Funding Information: The authors gratefully acknowledge support for this work by Augmentation Awards for Science and Engineering Research Training (AASERT) Fellowship Grant No. N00014-96-1-1258, the Office of Naval Research (ONR) MURI, the ARO MURI, and the U.S. Air Force under Contract No. F04701-93-C-0094. One of the authors (J.R.H.) acknowledges ONR Contract No. N00014-981-0422. Two of the authors (K.L.W. and J.R.H.) also acknowledge the support of the Semiconductor Research Corporation. One of the authors (A.A.B.) acknowledges NSF and NASA support. ",

year = "2006",

doi = "10.1063/1.2357847",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "14",

}

TY - JOUR

T1 - Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

AU - Choi, D. S.

AU - Balandin, A. A.

AU - Leung, M. S.

AU - Stupian, G. W.

AU - Presser, N.

AU - Chung, S. W.

AU - Heath, J. R.

AU - Khitun, A.

AU - Wang, K. L.

N1 - Funding Information: The authors gratefully acknowledge support for this work by Augmentation Awards for Science and Engineering Research Training (AASERT) Fellowship Grant No. N00014-96-1-1258, the Office of Naval Research (ONR) MURI, the ARO MURI, and the U.S. Air Force under Contract No. F04701-93-C-0094. One of the authors (J.R.H.) acknowledges ONR Contract No. N00014-981-0422. Two of the authors (K.L.W. and J.R.H.) also acknowledge the support of the Semiconductor Research Corporation. One of the authors (A.A.B.) acknowledges NSF and NASA support.

PY - 2006

Y1 - 2006

N2 - The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

AB - The authors have carried out measurements of the electrical conductivity of single bismuth nanowires fabricated by the low energy electron beam lithography using the silver/silicon nanowire shadow masks. The examined nanowires had cross-sectional dimensions of 40×30 and 40×50 nm2. The chosen nanowire sizes had been slightly below the critical diameter D (∼50 nm) at which a semimetal to semiconductor phase transition was predicted to occur. The results reveal a semiconductorlike temperature dependence of the electrical conductivity of a bismuth nanowire, which is strikingly different from that of the bulk bismuth.

UR - https://www.scopus.com/pages/publications/33749459486

UR - https://www.scopus.com/pages/publications/33749459486#tab=citedBy

U2 - 10.1063/1.2357847

DO - 10.1063/1.2357847

M3 - Article

AN - SCOPUS:33749459486

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141503

ER -

Transport study of a single bismuth nanowire fabricated by the silver and silicon nanowire shadow masks

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此