Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements

Tsung Hsien Kao, San Lein Wu, Kai Shiang Tsai, Yean Kuen Fang, Chien Ming Lai, Chia Wei Hsu, Yi Wen Chen, Osbert Cheng, Shoou Jinn Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, the impact of aluminum ion implantation on 1/f noise characteristics and random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) was investigated. Aluminum ion implantation (Al I/I) into TiN/HfO2/ SiO2 was implemented to tune an effective work function (EWF) in pMOSFETs without EOT increase complicated processes. RTN and 1/f results revealed that regardless of the implanted dose, HK/MG devices with Al I/I exhibit lower slow oxide trap densities than the control devices, which are responsible for the reduced trap position (xt) from the SiO2 interfacial layer (IL)/Si interface. For the HK/MG devices with different implanted doses, no significant differences in trap properties were observed.

原文English
文章編號04EC14
期刊Japanese Journal of Applied Physics
53
發行號4 SPEC. ISSUE
DOIs
出版狀態Published - 2014 四月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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