TREATISE ON THE CAPACITANCE-VOLTAGE RELATION OF HIGH ELECTRON MOBILITY TRANSISTORS.

Laurence P. Sadwick, K. L. Wang

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

A new model for the capacitance-voltage relation of a HEMT is presented. The model uses three physically motivated capacitive terms in series. The C(V) expressions are derived using the quantum mechanical triangular potential well model and the two-dimensional electron-gas charge-control model. These expressions provide further physical insight into the AlGaAs heterosystem. The results obtained should be readily applicable to such techniques as DLTS and other C-V interface measurement methods. The equations derived will also serve as a bias for analytical and circuit modeling of HEMT structures.

原文English
頁(從 - 到)651-656
頁數6
期刊IEEE Transactions on Electron Devices
ED-33
發行號5
DOIs
出版狀態Published - 1986

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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