TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices

Fu Kuo Hsueh, Hsiao Yun Chiu, Chang Hong Shen, Jia Min Shieh, Ying Tsan Tang, Chih Chao Yang, Hsiu Chih Chen, Wen Hsien Huang, Bo Yuan Chen, Kun Ming Chen, Guo Wei Huang, Wei Hao Chen, Kuo Hsiang Hsu, Srivatsa Rangachar Srinivasa, Nicholas Jao, Albert Lee, Hochul Lee, Vijaykrishnan Narayanan, Kang Lung Wang, Meng Fan ChangWen Kuan Yeh

研究成果: Conference contribution

12 引文 斯高帕斯(Scopus)

摘要

This paper presents the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology. The 9T 3D CIM SRAM cell is able to compute NAND/AND, OR/NOR and XOR/XNOR operations within a single memory cycle. We fabricated stackable multi-fin single-grained Si FinFET using low thermal-budget CO2 far-infrared laser annealing (FIR-LA) for activation and self-aligned silicide. The proposed device achieved high Ion (320 μA/μm (n-FET) and 275 μA/μm (p-FET)) and high Ion/Ioff (>107). The proposed scheme enables the fabrication of energy and area efficient circuits for cost-aware intelligent IoT devices. For proposed 9T CIM SRAM cell, the monolithic 3D device reduces area overhead by 51%, compared to the 2D version, thanks to the stacking of three additional transistors above the 6T SRAM cell.

原文English
主出版物標題2017 IEEE International Electron Devices Meeting, IEDM 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面12.6.1-12.6.4
ISBN(電子)9781538635599
DOIs
出版狀態Published - 2018 一月 23
事件63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
持續時間: 2017 十二月 22017 十二月 6

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
國家/地區United States
城市San Francisco
期間17-12-0217-12-06

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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