摘要
A series of metallic (Co, Ga)-codoped ZnO single crystalline films have been grown by molecular beam epitaxy. All of the films exhibit metallic conducting behavior and high free carrier concentrations. Besides room temperature ferromagnetism, the anomalous Hall effect due to spin-orbit interaction was also found. Both the saturation magnetization and anomalous Hall effect can be tuned by the carrier concentration or conductivity, revealing that the ferromagnetism is carrier mediated in (Co, Ga)-codoped ZnO films. Our experimental observations are consistent with the recent theoretical description of carrier mediated magnetism in Co doped ZnO.
原文 | English |
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文章編號 | 062509 |
期刊 | Applied Physics Letters |
卷 | 95 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 2009 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)