Tuning the transport and magnetism in a Cr-Bi2Se3 topological insulator by Sb doping

Y. Tung, C. W. Chong, C. W. Liao, C. H. Chang, S. Y. Huang, P. Y. Chuang, M. K. Lee, C. M. Cheng, Y. C. Li, C. P. Liu, J. C.A. Huang

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3 引文 斯高帕斯(Scopus)

摘要

High-quality crystalline (Cr,Sb)-doped Bi2Se3 (Cr-BSS) films were synthesized using molecular beam epitaxy (MBE). The effect of Cr- and Sb-doping on the transport and magnetic properties of Cr-BSS films was systematically investigated. The sheet carrier density N2D was found to be reduced to ∼6 × 1012 cm-2 in this quaternary compound at room temperature. This has not previously been observed in a Cr-Bi2Se3-based magnetic topological insulator (TI). Moreover, owing to the Sb dopants, the weak localization (WL)-like positive magnetoconductance in magnetic Cr-Bi2Se3 (Cr-BS) was enhanced. The enhancement is attributed to the emergence of ferromagnetism, as evidenced from the field-dependent Hall resistance and magnetic moment. The obvious tunable electrical and magnetic properties by the Sb dopant in this system are well suited for applications based on magnetic TI devices.

原文English
頁(從 - 到)47789-47795
頁數7
期刊RSC Advances
7
發行號75
DOIs
出版狀態Published - 2017

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 化學工程 (全部)

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