Tunnel diodes fabricated from CdSe nanocrystal monolayers

S. H. Kim; G. Markovich; S. Rezvani; S. H. Choi; K. L. Wang; J. R. Heath

doi:10.1063/1.123035

Tunnel diodes fabricated from CdSe nanocrystal monolayers

S. H. Kim, G. Markovich, S. Rezvani, S. H. Choi, K. L. Wang, J. R. Heath

電機資訊學院

研究成果: Article › 同行評審

50 引文斯高帕斯（Scopus）

摘要

A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C₁₉H₃₉CO₂H), and an Al electrode. Each device was approximately 100 μm². Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

原文	English
頁（從 - 到）	317-319
頁數	3
期刊	Applied Physics Letters
卷	74
發行號	2
DOIs	https://doi.org/10.1063/1.123035
出版狀態	Published - 1999 1月 11

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.123035

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AU - Wang, K. L.

AU - Heath, J. R.

PY - 1999/1/11

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N2 - A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

AB - A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

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Tunnel diodes fabricated from CdSe nanocrystal monolayers

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