Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

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8 引文 斯高帕斯(Scopus)

摘要

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature. Four different resistive states are obtained by applying different stop voltages (Vstop) for the reset process. These four resistance states show good retention characteristics without any degradation and can be clearly distinguished from one another by more than 10 000 seconds under 100 mV stress. The current transport mechanism is dictated by a Schottky emission as the stop voltage Vstop increases from 1 to 1.5 V. The mechanism of multilevel RS is investigated and band diagrams are used to explain the multilevel RS phenomenon associated with Ti/MgZnO/Pt based RRAM devices.

原文English
頁(從 - 到)88166-88170
頁數5
期刊RSC Advances
5
發行號107
DOIs
出版狀態Published - 2015

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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