Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

指紋 深入研究「Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science