Two dimensional crystal tunneling devices for THz operation

B. D. Kong, C. Zeng, D. K. Gaskill, K. L. Wang, K. W. Kim

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

Two dimensional crystal heterostructures are shown to possess a unique opportunity for nonlinear THz devices. In contrast to the oxide tunneling barrier, the uniformity of layered crystal insulators provides an ideal condition for tunneling barriers in the atomic scale. Numerical calculations based on a first-principles method clearly indicate the feasibility of diode operation with barriers as thin as two monolayers when placed between graphene-metal asymmetric electrodes. Further analysis predicts cut-off frequencies over 10 THz while maintaining strong nonlinearity for zero-bias rectification. Application to hot electron transistors is also examined, illustrating potentially superior performance in the frequency range inaccessible thus far.

原文English
文章編號263112
期刊Applied Physics Letters
101
發行號26
DOIs
出版狀態Published - 2012 十二月 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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