Two-dimensional electron gases in delta-doped GaAs/In0.25Ga 0.75As/GaAs heterostructures

W. Lin, W. C. Hsu, T. S. Wu, S. Z. Chang, C. Wang, C. Y. Chang

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm -2) can be realized. Experimental results show that a structure with an 80 Å In0.25Ga0.75As layer as the active channel and an 80 Å spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.

原文English
頁(從 - 到)2681-2683
頁數3
期刊Applied Physics Letters
58
發行號23
DOIs
出版狀態Published - 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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