TY - JOUR
T1 - Two-dimensional ZnO nanowalls for gas sensor and photoelectrochemical applications
AU - Chang, Sheng Po
AU - Wen, Chen Hua
AU - Chang, Shoou Jinn
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/7
Y1 - 2014/7
N2 - Zinc oxide (ZnO) nanowalls were vertically grown on a glass substrate through a fast, low-temperature, catalyst-free process in a tube furnace. The morphology and microstructure of ZnO nanowalls were characterized by field-emission scanning electron microscopy, x-ray diffraction analysis, transmission electron microscopy, and photoluminescence measurements. The ZnO nanowall films showed strong UV emission and preferential c-axis orientation, with a hexagonal structure. Potential applications of the ZnO nanowalls were further investigated through experiments. The sensitivity of ZnO-based carbon monoxide gas sensors increased with increasing temperature and reached a maximum value at 300°C. In photoelectrochemical experiments, direct photoelectrolysis of water to generate hydrogen was performed using the ZnO nanowalls as the working photoelectrode. For an external bias of 1.2 V, the photocurrent densities reached 0.037 A/cm2 under Xe lamp illumination.
AB - Zinc oxide (ZnO) nanowalls were vertically grown on a glass substrate through a fast, low-temperature, catalyst-free process in a tube furnace. The morphology and microstructure of ZnO nanowalls were characterized by field-emission scanning electron microscopy, x-ray diffraction analysis, transmission electron microscopy, and photoluminescence measurements. The ZnO nanowall films showed strong UV emission and preferential c-axis orientation, with a hexagonal structure. Potential applications of the ZnO nanowalls were further investigated through experiments. The sensitivity of ZnO-based carbon monoxide gas sensors increased with increasing temperature and reached a maximum value at 300°C. In photoelectrochemical experiments, direct photoelectrolysis of water to generate hydrogen was performed using the ZnO nanowalls as the working photoelectrode. For an external bias of 1.2 V, the photocurrent densities reached 0.037 A/cm2 under Xe lamp illumination.
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U2 - 10.1007/s13391-014-3272-x
DO - 10.1007/s13391-014-3272-x
M3 - Article
AN - SCOPUS:84905398394
SN - 1738-8090
VL - 10
SP - 693
EP - 697
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 4
ER -