Two-stage hot-carrier-induced degradation of p-type LDMOS transistors

Jone F. Chen, Tzu Hsiang Chen, Deng Ren Ai

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Hot-carrier-induced device degradation of high-voltage p-type lateral diffused metal-oxide semiconductor (LDMOS) transistors is investigated. A two-stage linear region drain current (IDlin) shift (IDlin shift increases rapidly at the beginning of stress but tends to saturate when the stress time is longer) is observed. Technology computer-aided-design simulations and direct current current-voltage measurement results suggest that the decrease of residual fabrication interface traps (NIT) leads to an initial increase in IDlin shift. On the other hand, two competing mechanisms, i.e. increase in NIT generation and increase in electron trapping, are responsible for the saturated IDlin shift when the stress time is longer.

原文English
頁(從 - 到)1751-1753
頁數3
期刊Electronics Letters
50
發行號23
DOIs
出版狀態Published - 2014 十一月 6

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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