Types of oval defects on GaAs grown by MBE

C. T. Lee, Y. C. Chou

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

According to the shapes of oval defects, three distinguished types are observed on the MBE grown GaAs epilayers. All of their long oval axis were along the 〈110〉 direction, but their origins are attributed to different sources. The origins of each type are deduced by a series of experiments. The composition of the oval defects is similar to that of the grown epi-layers by the analysis of EDAX.

原文English
頁(從 - 到)169-172
頁數4
期刊Journal of Crystal Growth
91
發行號1-2
DOIs
出版狀態Published - 1988 八月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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