Ultra-flat AlN grown with a pulsed H 2 etching condition

Chun Pin Huang, Kapil Gupta, Chuan Pu Liu, Kun Yu Lai

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A 1.5 μm AlN epilayer with a root-mean-square surface roughness of 0.25 nm was grown by metal-organic chemical vapor deposition at the single substrate temperature below 1200 °C. The ultra-flat surface is achieved with 30 min annealing performed in the initial growth, during which abrupt AlN hillocks are removed by pulsed H 2 etching controlled via the on/off duration of NH 3 supply. The pulsed etching technique effectively tailors the island-like morphology of the AlN buffer, facilitating the lateral crystal nucleation in subsequent growth. This study provides a simple, feasible and cost-effective manufacturing method for high-quality AlN.

原文English
文章編號015509
期刊Applied Physics Express
12
發行號1
DOIs
出版狀態Published - 2019 一月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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