Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

C. Grezes, F. Ebrahimi, J. G. Alzate, X. Cai, J. A. Katine, J. Langer, B. Ocker, P. Khalili Amiri, K. L. Wang

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121 引文 斯高帕斯(Scopus)

摘要

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

原文English
文章編號012403
期刊Applied Physics Letters
108
發行號1
DOIs
出版狀態Published - 2016 一月 4

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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