Ultrafast dynamics of InAs/GaAs quantum dot microdisk lasers

H. Cao, K. J. Luo, J. Y. Xu, Y. Ma, G. S. Chang, S. T. Ho, G. S. Solomon

研究成果: Conference contribution

摘要

Summary form only given. In order to improve the speed of microdisk lasers, the carrier diffusion process must be eliminated. Very recently, lasing has been achieved in InAs quantum dot (QD) embedded microdisk cavities. We report our experimental study of the dynamic response of microdisk lasers with quantum dots as the active media. In a QD microdisk laser, the carrier diffusion in the disk plane is suppressed because the carriers are confined in individual quantum dots. Hence, the turn-on time of a QD microdisk laser is greatly shortened, e.g., it can be as short as 7.8 ps at 5 K. Furthermore, we observed that the turn-on time increases as the pump power approaches the lasing threshold. This phenomenon is not easy to be observed in a QW microdisk laser due to carrier diffusion effect. The dynamics of the QD microdisk lasers has also been studied over a wide temperature range from 5 to 120 K. Under the same pumping level, the turn-on time appears to decrease with increasing temperature. This behavior may be a result of faster carrier capture and relaxation processes in quantum dots at higher temperatures.

原文English
主出版物標題Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
發行者Institute of Electrical and Electronics Engineers Inc.
頁面66
頁數1
ISBN(電子)155752663X, 9781557526632
DOIs
出版狀態Published - 2001
事件Quantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
持續時間: 2001 五月 62001 五月 11

出版系列

名字Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
國家/地區United States
城市Baltimore
期間01-05-0601-05-11

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 輻射

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