Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

Pei Ying Lai; Jen Sue Chen

doi:10.1109/LED.2010.2099102

Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

Pei Ying Lai, Jen Sue Chen

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

An ultrahigh on/off -current ratio of 5×10⁹ is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.

原文	English
文章編號	5704541
頁（從 - 到）	387-389
頁數	3
期刊	IEEE Electron Device Letters
卷	32
發行號	3
DOIs	https://doi.org/10.1109/LED.2010.2099102
出版狀態	Published - 2011 3月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2010.2099102

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title = "Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer",

abstract = "An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.",

author = "Lai, {Pei Ying} and Chen, {Jen Sue}",

note = "Funding Information: Manuscript received November 26, 2010; accepted November 30, 2010. Date of publication January 31, 2011; date of current version February 23, 2011. This work was supported in part by the National Science Council of Taiwan under Grant NSC-96-2628-E-006-013-MY3, by National Cheng Kung University Landmark Project A0051, and by the Applied Materials Taiwan. The review of this letter was arranged by Editor S. Kawamura.",

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AU - Lai, Pei Ying

AU - Chen, Jen Sue

N1 - Funding Information: Manuscript received November 26, 2010; accepted November 30, 2010. Date of publication January 31, 2011; date of current version February 23, 2011. This work was supported in part by the National Science Council of Taiwan under Grant NSC-96-2628-E-006-013-MY3, by National Cheng Kung University Landmark Project A0051, and by the Applied Materials Taiwan. The review of this letter was arranged by Editor S. Kawamura.

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AB - An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.

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Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

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