Ultralow thermal conductivity in n-type Ge-doped AgBiSe2 thermoelectric materials

Hsin Jay Wu, Pai Chun Wei, Hao Yen Cheng, Jie Ru Deng, Yang Yuan Chen

研究成果: Article同行評審

47 引文 斯高帕斯(Scopus)

摘要

The n-type I-V-VI2 AgBiSe2 features intrinsically low κ due to the anharmonicity of chemical bonds. Experimentally-determined isothermal section guides the starting compositions for the following AgBiSe2-based alloys. Among the undoped alloys, the Ag25Bi25Se50 exhibits a highest peak of zT∼0.75, and yet the neighboring Ag20Bi27.5Se52.5, which involves a Se-rich liquid phase, has a much lower zT∼0.3 at 748 K, respectively. With the incorporation of Ge, the (GeSe)0.03(AgBiSe2)0.97 exhibits an ultralow κ∼0.3 (W/mK), owing to the formation of Bi2Se3 nano-precipitate in the size of 20–40 nm. Additionally, the moiré fringes with a periodicity of 0.25 nm are observed in the Bi2Se3 nano-precipitate, implying the presence of local mass fluctuation and superlattice, which could further lead to enhancing phonon scattering and reduced κ. As a result, the ultra-low κ∼0.3 (W/mK) boosts the peak of zT up to zT∼1.05 in n-type (GeSe)0.03(AgBiSe2)0.97, which shows a 140% enhancement compared with that of the undoped AgBiSe2.

原文English
頁(從 - 到)217-229
頁數13
期刊Acta Materialia
141
DOIs
出版狀態Published - 2017 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 陶瓷和複合材料
  • 聚合物和塑料
  • 金屬和合金

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