摘要
The n-type I-V-VI2 AgBiSe2 features intrinsically low κ due to the anharmonicity of chemical bonds. Experimentally-determined isothermal section guides the starting compositions for the following AgBiSe2-based alloys. Among the undoped alloys, the Ag25Bi25Se50 exhibits a highest peak of zT∼0.75, and yet the neighboring Ag20Bi27.5Se52.5, which involves a Se-rich liquid phase, has a much lower zT∼0.3 at 748 K, respectively. With the incorporation of Ge, the (GeSe)0.03(AgBiSe2)0.97 exhibits an ultralow κ∼0.3 (W/mK), owing to the formation of Bi2Se3 nano-precipitate in the size of 20–40 nm. Additionally, the moiré fringes with a periodicity of 0.25 nm are observed in the Bi2Se3 nano-precipitate, implying the presence of local mass fluctuation and superlattice, which could further lead to enhancing phonon scattering and reduced κ. As a result, the ultra-low κ∼0.3 (W/mK) boosts the peak of zT up to zT∼1.05 in n-type (GeSe)0.03(AgBiSe2)0.97, which shows a 140% enhancement compared with that of the undoped AgBiSe2.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 217-229 |
| 頁數 | 13 |
| 期刊 | Acta Materialia |
| 卷 | 141 |
| DOIs | |
| 出版狀態 | Published - 2017 12月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 陶瓷和複合材料
- 聚合物和塑料
- 金屬和合金
指紋
深入研究「Ultralow thermal conductivity in n-type Ge-doped AgBiSe2 thermoelectric materials」主題。共同形成了獨特的指紋。引用此
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