Ultrasensitive Self-Driven Terahertz Photodetectors Based on Low-Energy Type-II Dirac Fermions and Related Van der Waals Heterojunctions

Kaixuan Zhang, Zhen Hu, Libo Zhang, Yulu Chen, Dong Wang, Mengjie Jiang, Gianluca D'Olimpio, Li Han, Chenyu Yao, Zhiqingzi Chen, Huaizhong Xing, Chia-Nung Kuo, Chin Shan Lue, Ivana Vobornik, Shao Wei Wang, Antonio Politano, Weida Hu, Lin Wang, Xiaoshuang Chen, Wei Lu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low-energy photonics. Here, low-energy type-II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal-topological semimetal-metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W−1, with a response time of 0.6 µs, a noise-equivalent power of 18 pW Hz−0.5, with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self-powered, low-power, room-temperature, and ultrafast THz detection.

原文English
文章編號2205329
期刊Small
19
發行號1
DOIs
出版狀態Published - 2023 1月 4

All Science Journal Classification (ASJC) codes

  • 生物技術
  • 一般化學
  • 生物材料
  • 一般材料科學

指紋

深入研究「Ultrasensitive Self-Driven Terahertz Photodetectors Based on Low-Energy Type-II Dirac Fermions and Related Van der Waals Heterojunctions」主題。共同形成了獨特的指紋。

引用此