Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology

Physics & Astronomy

• CMOS 57%
• defects 3%
• electric potential 3%
• expansion 4%
• geometry 8%
• isolation 61%
• leakage 17%
• linings 70%
• oxides 4%
• performance 6%
• requirements 4%
• scaling 10%
• steam 7%
• thresholds 4%
• transistors 5%

Engineering & Materials Science

• Defects 8%
• Electric potential 6%
• Geometry 15%
• Leakage currents 27%
• Nitridation 100%
• Oxides 11%
• Plasmas 59%
• Static random access storage 14%
• Steam 10%
• Transistors 10%

Chemical Compounds

• Leakage Current 84%
• Liquid Film 15%
• Oxide 17%
• Purity 16%
• Voltage 23%
• Volume 18%