Ultraviolet electroluminescence from ZnO-based n-i-p light-emitting diodes

Ching Ting Lee, Jheng Tai Yan

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The p-type ZnO films were obtained using codeposition of ZnO and LiNO 3 sources by the vapor cooling condensation system. With an adequate postannealing temperature, the p-type conductive behaviors of the resulting ZnO films could be achieved due to the activation of Li-N dual acceptor. According to the emission energy of free electron to acceptor hole level, the acceptor binding energy of 137 meV was obtained. Furthermore, the ZnO-based n-i-p ultraviolet light-emitting diodes were deposited on sapphire substrates using the vapor cooling condensation system. A rectifying diode-like behavior and ultraviolet emission were observed from the ZnO-based n-i-p light-emitting diodes.

原文English
文章編號5682388
頁(從 - 到)353-355
頁數3
期刊IEEE Photonics Technology Letters
23
發行號6
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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