TY - JOUR
T1 - Ultraviolet Light-Activated Charge Modulation Heterojunction for Versatile Organic Thin Film Transistors
AU - Wu, Fu Chiao
AU - Li, Pei Rong
AU - Lin, Bo Ren
AU - Wu, Ren Jie
AU - Cheng, Horng Long
AU - Chou, Wei Yang
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, through Grant MOST 109-2221-E-006-149 and 110-2112-M-006-015. We are grateful to the National Center for High-Performance Computing of Taiwan for computer time and facilities.
Publisher Copyright:
© 2021 American Chemical Society
PY - 2021/9/29
Y1 - 2021/9/29
N2 - Organic thin film transistors (OTFTs) are a promising technology for the application of photosensors in smart wearable devices. Light-induced electrical behavior of OTFTs is explored to achieve diverse functional requirements. In most studies, OTFTs show an increased drain current (ID) under light irradiation. Here, we use an ultraviolet (UV) light absorption top layer, tris(8-hydroxyquinoline) aluminum (Alq3), to improve the UV light response of poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OTFTs. Unexpectedly, the Alq3-covered device operated at the accumulation mode demonstrates a decreasedIDduring the UV light irradiation.N,N′-Ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI, electron acceptor), pentacene (electron donor), and lithium fluoride (LiF, insulator) as an interlayer were inserted between the P3HT and the Alq3 layers. The PTCDI/Alq3-covered device also shows an unusual decrease inIDunder the UV light but an increase inIDunder the green light. The pentacene/Alq3-covered device shows an increasedIDduring the UV light irradiation and, unexpectedly, a memory effect inIDafter removing the UV light. The LiF/Alq3-covered device exhibits an electrical behavior similar to the bare P3HT-based device under the UV light. Results of spectroscopic analyses and theoretical calculations have shown that the occurrence of charge transfer at heterojunctions during the UV light irradiation causes charge modulation in the multilayered P3HT-based OTFTs and then results in an unusual decrease or memory effect inID. In addition, the unexpectedIDreduction can be observed in the Alq3-covered poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]-based OTFTs under UV light. The features, including opposite electrical responses to different wavelengths of light and optical memory effect, provide the multilayered P3HT-based OTFTs with potential for various optical applications, such as image recognition devices, optical logic gates, light dosimeters, and optical synapses.
AB - Organic thin film transistors (OTFTs) are a promising technology for the application of photosensors in smart wearable devices. Light-induced electrical behavior of OTFTs is explored to achieve diverse functional requirements. In most studies, OTFTs show an increased drain current (ID) under light irradiation. Here, we use an ultraviolet (UV) light absorption top layer, tris(8-hydroxyquinoline) aluminum (Alq3), to improve the UV light response of poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OTFTs. Unexpectedly, the Alq3-covered device operated at the accumulation mode demonstrates a decreasedIDduring the UV light irradiation.N,N′-Ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI, electron acceptor), pentacene (electron donor), and lithium fluoride (LiF, insulator) as an interlayer were inserted between the P3HT and the Alq3 layers. The PTCDI/Alq3-covered device also shows an unusual decrease inIDunder the UV light but an increase inIDunder the green light. The pentacene/Alq3-covered device shows an increasedIDduring the UV light irradiation and, unexpectedly, a memory effect inIDafter removing the UV light. The LiF/Alq3-covered device exhibits an electrical behavior similar to the bare P3HT-based device under the UV light. Results of spectroscopic analyses and theoretical calculations have shown that the occurrence of charge transfer at heterojunctions during the UV light irradiation causes charge modulation in the multilayered P3HT-based OTFTs and then results in an unusual decrease or memory effect inID. In addition, the unexpectedIDreduction can be observed in the Alq3-covered poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]-based OTFTs under UV light. The features, including opposite electrical responses to different wavelengths of light and optical memory effect, provide the multilayered P3HT-based OTFTs with potential for various optical applications, such as image recognition devices, optical logic gates, light dosimeters, and optical synapses.
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U2 - 10.1021/acsami.1c12390
DO - 10.1021/acsami.1c12390
M3 - Article
C2 - 34520181
AN - SCOPUS:85116061908
SN - 1944-8244
VL - 13
SP - 45822
EP - 45832
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 38
ER -