Ultraviolet light emitting diodes based on hydrothermal grown crystalline n-ZnO on p-GaN film

Yung Chun Tu, Shui-Jinn Wang, Tseng Hsing Lin, Chien Hsiung Hung, Cheng Han Wu, Zong Sian You

研究成果: Conference contribution

摘要

The growth of single crystalline ZnO film on p-GaN using the hydrothermal method is proposed and its application on n-ZnO/p-GaN heterojunction light emitting diodes (HJ-LED) is demonstrated. The effect of thermal annealing in the nitrogen ambient on the optical and electrical properties of hydrothermally grown ZnO film (HTG-ZnO film) onto a p-GaN substrate is investigated. The current-voltage (I-V) curves in darkness show that the prepared n-HTG-ZnO film/p-GaN HJ with thermal annealing has good rectifying characteristics and a 150% improvement in leakage current at -4 V has been achieved for the n-ZnO/p-GaN with thermal annealing. Strong ultraviolet lights emission from the annealed n-ZnO/p-GaN HJ-LED at around 375 nm without defect-related emissions in the visible region are observed from electroluminescence (EL) spectra.

原文English
主出版物標題73rd Annual Device Research Conference, DRC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面167-168
頁數2
ISBN(電子)9781467381345
DOIs
出版狀態Published - 2015 八月 3
事件73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
持續時間: 2015 六月 212015 六月 24

出版系列

名字Device Research Conference - Conference Digest, DRC
2015-August
ISSN(列印)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
國家United States
城市Columbus
期間15-06-2115-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • 引用此

    Tu, Y. C., Wang, S-J., Lin, T. H., Hung, C. H., Wu, C. H., & You, Z. S. (2015). Ultraviolet light emitting diodes based on hydrothermal grown crystalline n-ZnO on p-GaN film. 於 73rd Annual Device Research Conference, DRC 2015 (頁 167-168). [7175609] (Device Research Conference - Conference Digest, DRC; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175609