Ultraviolet photodetector based on MgxZn1-xO thin films deposited by radio frequency magnetron sputtering

Hsin Ying Lee, Ming Yi Wang, Kuo Jen Chang, Wen Jen Lin

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

The MgxZn1-xO (0 ≤ x ≤ 0.36) films were deposited on an Al2O3 substrate by radio frequency magnetron sputtering. The X-ray diffraction analysis showed the deposited MgZnO films have a single-phase hexagonal wurtzite structure. The optical bandgap of MgxZn1-xO films exhibited a linear increase from 3.25 to 4.04 eV with the Mg content x increasing from 0 to 0.36. Correspondingly, the cutoff wavelength of the resultant detectors varies from 380 to 310 nm, indicating that the detecting wavelengths of the MgxZn1-xO metal-semiconductor-metal ultraviolet photodetectors (MSM-UPDs) can be controlled by simply adjusting the Mg contents in the film. The resultant MgZnO MSM-UPDs with various Mg contents exhibit promising performances. At a bias voltage of 20 V, the dark currents of all MSM-UPDs are smaller than 0.6 nA. The rejection ratio of the MSM-UPDs varies from 701 to 769, slightly dependent on the Mg contents.

原文English
頁(從 - 到)2108-2110
頁數3
期刊IEEE Photonics Technology Letters
20
發行號24
DOIs
出版狀態Published - 2008 十二月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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