Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

Rong Ming Ko, Wei Ting Chen, Hao Che Cheng, Chien Hung Wu, Chao Yen Chang, Shui Jinn Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I dark) and photocurrent (I ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30 nm thick upper layer stacked on a 50 nm thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A W−1 and 1.03 × 107 A A−1, which is about 272 and 137 times higher than conventional 30 nm thick single-channel layer SZTO TFT.

原文English
文章編號SC1006
期刊Japanese journal of applied physics
62
發行號SC
DOIs
出版狀態Published - 2023 4月 1

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

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