摘要
Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I dark) and photocurrent (I ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30 nm thick upper layer stacked on a 50 nm thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A W−1 and 1.03 × 107 A A−1, which is about 272 and 137 times higher than conventional 30 nm thick single-channel layer SZTO TFT.
原文 | English |
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文章編號 | SC1006 |
期刊 | Japanese journal of applied physics |
卷 | 62 |
發行號 | SC |
DOIs | |
出版狀態 | Published - 2023 4月 1 |
All Science Journal Classification (ASJC) codes
- 一般工程
- 一般物理與天文學