Ultraviolet ZnO nanorod/P-GaN-heterostructured light-emitting diodes

Jheng Tai Yan, Chia Hsun Chen, Shiu Fang Yen, Ching Ting Lee

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

Both i-ZnO and n-ZnO:In nanorod arrays were grown on a p-GaN layer with an anodic alumina membrane template using a vapor cooling condensation method. Electroluminescence emissions were observed from the resulting p-n (p-GaN/n-ZnO:In nanorod array) and p-i-n (p-GaN/i-ZnO nanorod array/n-ZnO:In nanorod array) heterostructured light-emitting diodes (LEDs). The ultraviolet emission peak at 386 nm observed in the p-i-n heterostructured LEDs was attributed to radiative recombination of the near-band edge in the i-ZnO nanorods. Using power-law fitted currentvoltage relationships, it was shown that a space-charge-limited current and associated effects occurred in the p-n and p-i-n nanorod heterostructured LEDs.

原文English
文章編號5342485
頁(從 - 到)146-148
頁數3
期刊IEEE Photonics Technology Letters
22
發行號3
DOIs
出版狀態Published - 2010 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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