Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

Chia Fong Du, Chen Hui Lee, Chao Tsung Cheng, Kai Hsiang Lin, Jin Kong Sheu, Hsu Cheng Hsu

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

原文English
文章編號446
期刊Nanoscale Research Letters
9
發行號1
DOIs
出版狀態Published - 2014

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學

指紋

深入研究「Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction」主題。共同形成了獨特的指紋。

引用此