Undoped and doped junctionless FETs: Source/drain contacts and immunity to random dopant fluctuation

Liang Yu Chen, Yu Feng Hsieh, Kuo Hsing Kao

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

By using numerical simulations, we demonstrate that a proper source/drain contacting strategy not only boosts the on-currents, but also eliminates random dopant fluctuation (RDF) of a junctionless FET (JLFET). Two contacting strategies for JLFETs with a wide range of doping concentration (1010 ∼ 1020 cm-3) are compared and discussed: Metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) contacts. The Schottky barrier at the MS contact shows more negative impacts on the oncurrent when the JLFET is not doped heavily. With dopantless and unintentionally doped Si (doping concentration = 1010 ∼ 1017 cm-3 for both n-type dopants and p-type dopants), the JLFETs with MIS contacts may exhibit higher on-currents than those with MS contacts and show almost the same transfer characteristics. The later result actually implies that the JLFET with MIS contacts possesses the immunity against RDF.

原文English
文章編號7891976
頁(從 - 到)708-711
頁數4
期刊IEEE Electron Device Letters
38
發行號6
DOIs
出版狀態Published - 2017 六月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「Undoped and doped junctionless FETs: Source/drain contacts and immunity to random dopant fluctuation」主題。共同形成了獨特的指紋。

引用此