TY - JOUR
T1 - Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators
AU - Fan, Yabin
AU - Shao, Qiming
AU - Pan, Lei
AU - Che, Xiaoyu
AU - He, Qinglin
AU - Yin, Gen
AU - Zheng, Cheng
AU - Yu, Guoqiang
AU - Nie, Tianxiao
AU - Masir, Massoud R.
AU - MacDonald, Allan H.
AU - Wang, Kang L.
N1 - Funding Information:
We would like to acknowledge the Spin and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science Basic Energy Sciences (BES), under Award #S000686 and the National Science Foundation (DMR-1411085), for the support on device fabrication and lowerature measurements. The theoretical analysis was supported by the U.S. Army Research Office MURI program under Grant W911NF-16-1-0472 and W911NF-15-1-10561. We are also grateful to the support from the FAME center, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.
Funding Information:
We would like to acknowledge the Spin and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award #S000686 and the National Science Foundation (DMR-1411085), for the support on device fabrication and low-temperature measurements. The theoretical analysis was supported by the U.S. Army Research Office MURI program under Grant W911NF-16-1-0472 and W911NF-15-1-10561. We are also grateful to the support from the FAME center, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/2/13
Y1 - 2019/2/13
N2 - Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with two-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant's magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant's position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with two-terminal geometry.
AB - Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with two-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant's magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant's position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with two-terminal geometry.
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U2 - 10.1021/acs.nanolett.8b03702
DO - 10.1021/acs.nanolett.8b03702
M3 - Article
C2 - 30685979
AN - SCOPUS:85061587426
VL - 19
SP - 692
EP - 698
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 2
ER -