Uniform resistive switching properties of sol-gel multilayered BaTiNiOx memory device

Yu An Li, Yu Chi Chang, Ke Jing Lee, Cheng Jung Lee, Chiou Che Hsieh, Tzu Han Su, Li Wen Wang, Yeong Her Wang

研究成果: Conference contribution

摘要

The modification of multilayered barium titanate nickelate (BTN) thin films on ITO/glass substrate is adopted to enhance the device performance. The XPS analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTN layer. In addition, the Ni acts as clusters and plays a critical role in the formation/rupture of cone-shaped conductive paths during resistive switching, which promotes the local alignment of oxygen vacancies among metallic-Ni clusters. Thus, the sol-gel BTN memory devices with high ON/OFF ratio and excellent current distribution can be achieved.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態Published - 2018 6月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 2018 5月 72018 5月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
國家/地區Taiwan
城市Taipei
期間18-05-0718-05-09

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 儀器

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