Unipolar resistive switching behavior of Pt/LixZn 1-xO/Pt resistive random access memory devices controlled by various defect types

Chun Cheng Lin, Zong Liang Tseng, Kuang Yao Lo, Chih Yu Huang, Cheng Shong Hong, Sheng Yuan Chu, Chia Chiang Chang, Chin Jyi Wu

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

The unipolar resistive switching behavior of Pt/LixZn 1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content.

原文English
文章編號203501
期刊Applied Physics Letters
101
發行號20
DOIs
出版狀態Published - 2012 十一月 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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