Universal enhancement of Tc under high pressure in HgBa2Cam-1CumO2m+2+δ

L. Gao, Y. Y. Xue, F. Chen, Q. Xiong, R. L. Meng, D. Rameriz, C. W. Chu, J. Eggert, H. K. Mao

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The superconducting transition temperatures (Tc) of optimally doped HgBa2Cam-1CumO2m+2+δ with m=1, 2, 3 and (Hg1-xPbx)Ba2Cam-1CumO2m+2+δ were examined under quasihydrostatic pressures up to 45 GPa. There seems to be a universal enhancement of Tc under pressure regardless of m. Highest Tc of 164 K is reached in the 3-layer compound. This enhancement is strongly suppressed by Pb doping.

原文English
頁(從 - 到)1493-1494
頁數2
期刊Physica C: Superconductivity and its applications
235-240
發行號PART 2
DOIs
出版狀態Published - 1994 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 能源工程與電力技術
  • 電氣與電子工程

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